| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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64 pcs
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64 pcs | On Request | 1 | On Request | On Request | 1431+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| SVHC Present |
The Toshiba TPCP8013,LF is an N-channel single power MOSFET from the U-MOS IV generation. It is designed for applications such as mobile equipment and motor drivers.
Key electrical characteristics include a maximum drain-source voltage (V DSS) of 60V and a maximum continuous drain current (I D) of 4A. The device exhibits a low drain-source on-resistance, with a maximum of 0.0779 Ω at V GS = 6V and 0.0518 Ω at V GS = 10V. Typical input capacitance (C iss) is 515 pF, and typical total gate charge (Q g) is 12 nC.
This MOSFET is housed in a surface-mount PS-8 package with 8 pins. It is RoHS compatible and manufactured in Japan.
The maximum drain-source voltage is 60V.
The maximum drain current is 4A.
The maximum on-resistance at Vgs=10V is 0.0518Ω.
The maximum power dissipation is 1.96W.
The TPCP8013,LF comes in a PS-8 surface-mount package.
The typical input capacitance is 515pF.