| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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64 pcs
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64 pcs | On Request | 1 | On Request | On Request | 1431+ | On Request | On Request |
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The Toshiba TPCP8013 is an N-channel Silicon MOSFET from the U-MOS IV generation, suitable for motor drivers and mobile equipment applications. It is AEC-Q101 qualified, indicating its suitability for automotive environments.
Key electrical characteristics include a maximum drain-source voltage (VDSS) of 60V and a continuous drain current (ID) of 4A. The device offers a low drain-source on-resistance (RDS(ON)) of 41.5 mΩ typically at a gate-source voltage (VGS) of 10V, and 77.9 mΩ maximum at VGS = 6V. It also features a low leakage current of 10 µA maximum at 60V VDS and a typical total gate charge (Qg) of 12 nC.
The MOSFET operates with a threshold voltage (Vth) between 2V and 3V. It is housed in a small, thin PS-8 surface-mount package with 8 pins. Thermal characteristics include a channel-to-ambient thermal resistance of 76.5 °C/W when mounted on a glass-epoxy board (a).
Absolute maximum ratings specify a channel temperature up to 175°C and a storage temperature range of -55°C to 175°C. The device has a single-pulse avalanche energy rating of 29.2 mJ.
The maximum drain-source voltage (VDSS) for the TPCP8013 is 60V.
The typical drain-source on-resistance (RDS(ON)) at VGS = 10V is 41.5 mΩ.
The TPCP8013 MOSFET is in a PS-8 package.
Yes, the TPCP8013 MOSFET is AEC-Q101 qualified.
The main applications for the TPCP8013 are motor drivers and mobile equipment.