| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
250 pcs
|
250 pcs | On Request | 1 | On Request | On Request | 1427+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Toshiba TPCP8011,LF is an N-Channel MOSFET belonging to the PB-F POWER MOSFET TRANSISTOR series. This component is designed for surface mount applications and comes in a PS-8 package with flat leads.
Key electrical characteristics include a drain-to-source voltage (Vdss) of 40V and a continuous drain current (Id) of 5A at ambient temperature (Ta). The on-resistance (Rds On) is a maximum of 51.2mOhm at 2.5A drain current and 10V gate-to-source voltage. Input capacitance (Ciss) is 505pF at 10V, and gate charge (Qg) is 11.8nC at 10V. The gate-to-source voltage (Vgs) maximum is ±20V, with a gate threshold voltage (Vgs(th)) of 3V at 1mA.
This MOSFET operates within a temperature range of -55°C to 175°C. Its power dissipation is rated at a maximum of 940mW at ambient temperature (Ta). The component is RoHS3 compliant, has an MSL of 1, and is REACH unaffected.
Designed for various electronic circuits, the TPCP8011,LF is suitable for applications requiring efficient switching and power handling in a compact surface mount form factor.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
40V.
8-SMD flat lead package (PS-8).
175°C.
5A at ambient temperature.
51.2mOhm maximum at 2.5A and 10V gate drive.
3V maximum at 1mA drain current.
11.8nC maximum at 10V gate-source voltage.