| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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250 pcs
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250 pcs | On Request | 1 | On Request | On Request | 1425+ | On Request | On Request |
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The Toshiba TPCP8009 is a silicon N-channel MOSFET belonging to the U-MOS series. It is designed for applications such as motor drivers and mobile equipment, benefiting from its small, thin package.
Key electrical characteristics include a low drain-source on-resistance of 9.5 mΩ (typ.) at VGS = 10 V and a low leakage current of 10 µA (max) at VDS = 40 V. The device also offers a small gate charge of 9.6 nC (typ.). The enhancement mode MOSFET has a threshold voltage (Vth) ranging from 2 to 3 V.
Absolute maximum ratings specify a drain-source voltage (VDSS) of 40 V and a gate-source voltage (VGSS) of ±20 V. The continuous drain current (ID) is 10 A, and the pulsed drain current (IDP) is 40 A. Power dissipation is rated at 2.01 W and 1 W at 25°C depending on the mounting board.
The TPCP8009 is supplied in a PS-8 package. The internal circuit consists of Source (pins 1, 2, 3), Gate (pin 4), and Drain (pins 5, 6, 7, 8).
The maximum drain-source voltage is 40 V.
The maximum continuous drain current is 10 A.
The typical on-resistance is 9.5 mΩ at VGS = 10 V.
The package is PS-8.
The storage temperature range is -55 to 150 °C.
The maximum channel temperature is 175 °C.
The typical gate charge is 9.6 nC.