| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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6,000 pcs
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6000 pcs | On Request | 1 | On Request | On Request | 1243+ | On Request | On Request |
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| SVHC Present |
The Toshiba TPCP8004 is an N-Channel Metal-oxide Semiconductor Field-Effect Transistor (MOSFET) from Toshiba's U-MOS IV technology. It is designed for applications in notebook PCs and portable electronic equipment, benefiting from a small and thin package for space-constrained designs.
Key electrical characteristics include a typical drain current (I(D)) of 8.3A and a low typical drain-source on-resistance (RDS(ON)) of 7mΩ. The transistor also features a typical gate charge (Qg) of 26nC, contributing to its high-speed switching capabilities. Its high forward transfer admittance (|Yfs|) of 21S and low leakage current (IDSS) of 10μA further enhance its performance in power management applications.
This component is suitable for various power applications within portable devices. Its design prioritizes efficiency and compact integration, making it a valuable part for engineers developing next-generation portable electronics.
The maximum drain current is 8.3A.
The typical drain-source on-resistance is 7mΩ.
The typical gate charge is 26nC.
The typical forward transconductance is 21S.
The maximum leakage current is 10μA.
The TPCP8004 is available in an 8-SOIC surface-mount package.