| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,600 pcs
|
3600 pcs | On Request | 1 | On Request | On Request | 16+pb | On Request | On Request |
| Category | |
| Manufacturer Name | |
| SVHC Present |
The Toshiba TPCP8003-H is an N-Channel MOSFET belonging to the U-MOSIII technology family, designed for high-speed switching applications. It offers a 100V drain-source breakdown voltage and a continuous drain current of 2.2A at a power dissipation of 840mW (Ta).
Key electrical characteristics include a typical gate charge of 7.5 nC and a low typical drain-source on-resistance of 130 mΩ. The device also exhibits a high forward transfer admittance of 5.4 S (typ.) and a low leakage current of 10 μA (max) at 100V.
Packaged in a compact PS-8 surface mount package measuring 2.9mm x 2.4mm, the TPCP8003-H is suitable for applications requiring a small footprint. Its design is optimized for high efficiency DC/DC converters, notebook PCs, and other portable equipment where high-speed switching and low on-resistance are critical.
100V.
2.2A.
130mΩ.
PS-8 surface mount package.
7.5nC.
840mW.
5.4S.