TPCM8002-H The Toshiba TPCM8002-H is an N-channel MOSFET designed for power applications. It offers a 30V drain-source breakdown voltage and a continuous drain current of 30A.
Mfr Part #:

TPCM8002-H

Available from 1 distributors
Mfr Name: Toshiba
Toshiba
The Toshiba TPCM8002-H is an N-channel MOSFET designed for power applications. It offers a 30V drain-source breakdown voltage and a continuous drain current of 30A.
✓ Total Stock: 4,000 pcs

TPCM8002-H Available from 1 distributor

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✓ Non-Authorised
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4,000 pcs
4000 pcs On Request 1 On Request On Request 07+PB On Request On Request

TPCM8002-H Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Package / Case
Tape & Reel

TPCM8002-H Description

Short technical summary and product information.

The Toshiba TPCM8002-H is an N-channel MOSFET with a drain-source breakdown voltage of 30V and a maximum continuous drain current of 30A at 25°C. It features a low typical on-resistance (Rds(on)) of 4.1 mOhm at VGS=10V and ID=15A, and a typical gate threshold voltage (Vgs(th)) of 1.5V at ID=1mA.

 

This MOSFET is housed in an 8-pin TSSOP package, suitable for surface mounting. Its specifications make it appropriate for various power switching and control applications where efficient current handling and low conduction losses are required. The component is supplied on tape and reel for automated assembly processes.

 

Compliance information indicates RoHS3 compliance, MSL 1 Unlimited, and REACH unaffected status, though these are noted with low confidence and require verification from official sources.

TPCM8002-H Quick Information

Product Type: MOSFET
Canonical Name: Toshiba TPCM8002-H N-channel MOSFET
Subcategory: N-Channel

TPCM8002-H Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

TPCM8002-H Features

  • 30V drain-source breakdown voltage.
  • 30A continuous drain current.
  • 4.1 mOhm typical Rds(on).
  • 1.5V typical gate threshold voltage.
  • 8-pin TSSOP package.

TPCM8002-H Applications

  • Power management in portable electronics.
  • DC-DC converter applications.
  • Load switching for low-voltage circuits.
  • Suitable for power switching circuits.

TPCM8002-H FAQs

5 frequently asked questions generated from this part’s specifications.
What is the breakdown voltage of the TPCM8002-H MOSFET?

The drain-source breakdown voltage is a minimum of 30V.

What is the continuous drain current for the TPCM8002-H?

The maximum continuous drain current is 30A at 25°C.

What is the typical on-resistance (Rds(on)) of the TPCM8002-H?

The typical Rds(on) is 4.1 mOhm when VGS is 10V and ID is 15A.

What is the gate threshold voltage (Vgs(th)) for this MOSFET?

The typical gate threshold voltage is 1.5V at an ID of 1mA.

What package type is the TPCM8002-H supplied in?

The TPCM8002-H is supplied in an 8-pin TSSOP package.

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