| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,000 pcs
|
4000 pcs | On Request | 1 | On Request | On Request | 07+PB | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Package / Case | |
| Tape & Reel |
The Toshiba TPCM8002-H is an N-channel MOSFET with a drain-source breakdown voltage of 30V and a maximum continuous drain current of 30A at 25°C. It features a low typical on-resistance (Rds(on)) of 4.1 mOhm at VGS=10V and ID=15A, and a typical gate threshold voltage (Vgs(th)) of 1.5V at ID=1mA.
This MOSFET is housed in an 8-pin TSSOP package, suitable for surface mounting. Its specifications make it appropriate for various power switching and control applications where efficient current handling and low conduction losses are required. The component is supplied on tape and reel for automated assembly processes.
Compliance information indicates RoHS3 compliance, MSL 1 Unlimited, and REACH unaffected status, though these are noted with low confidence and require verification from official sources.
The drain-source breakdown voltage is a minimum of 30V.
The maximum continuous drain current is 30A at 25°C.
The typical Rds(on) is 4.1 mOhm when VGS is 10V and ID is 15A.
The typical gate threshold voltage is 1.5V at an ID of 1mA.
The TPCM8002-H is supplied in an 8-pin TSSOP package.