| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,580 pcs
|
2580 pcs | On Request | 1 | On Request | On Request | 12+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Input Capacitance | |
| Mounting Type | |
| Operating Temperature | |
| Tape & Reel |
The TPCF8402 from Toshiba is a Silicon N-Channel MOSFET suitable for various electronic applications. This component is designed for surface mount (SMD/SMT) integration, offering a breakdown voltage of 30V.
Key electrical characteristics include a maximum Drain-Source On-Resistance (RDS(on)) of 50mΩ and a typical resistance of 72mΩ. The MOSFET also features a typical input capacitance of 470pF, a rise time of 5.2ns, and a fall time of 4ns.
Thermal specifications indicate a maximum power dissipation of 330mW and a typical power dissipation of 1.35W. The operating temperature range for the TPCF8402 is from -55°C to 150°C.
This MOSFET is supplied in a Tape & Reel package, making it suitable for automated assembly processes.
The breakdown voltage is 30V.
The maximum on-resistance is 50mΩ.
The operating temperature range is -55°C to 150°C.
The maximum power dissipation is 0.33W.
The typical input capacitance is 470pF.
The typical rise time is 5.2ns.
The typical fall time is 4ns.