| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
37,000 pcs
|
37000 pcs | On Request | 1 | On Request | On Request | 2019 | On Request | On Request | |
|
1,305 pcs
|
1305 pcs | On Request | 1 | On Request | On Request | 03+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Mounting Type | |
| Number of Elements | |
| Operating Temperature Range | |
| Power Dissipation | |
| SVHC Present |
The TPCF8301 from Toshiba is a Power MOSFET designed for various electronic applications. It features a 20V Drain-Source On-Voltage and a Continuous Drain Current of 2.7A. The device exhibits a low Drain-Source On-Resistance of 0.11 ohm, contributing to efficient power handling.
This MOSFET operates with a Gate-Source Voltage maximum of 8V and has an enhancement channel mode. It is rated for a Power Dissipation of 1.35W and can operate within an extended temperature range of -55°C to 150°C. The component is constructed with two elements.
Designed for modern electronic assemblies, the TPCF8301 utilizes a surface mount package, specifically supplied on tape and reel for automated manufacturing processes. Its robust construction and specifications make it suitable for demanding applications requiring reliable MOSFET performance.
The maximum drain-source on-voltage is 20V.
The continuous drain current is 2.7A.
The drain-source on-resistance is 0.11Ω.
The operating temperature range is -55°C to 150°C.
The package type is VS and it is designed for surface mount mounting.
The TPCF8301 contains 2 elements.