| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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20,650 pcs
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20650 pcs | On Request | 1 | On Request | On Request | 0737+ | On Request | On Request |
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| Manufacturer Name | |
| Tape & Reel |
The TPCF8201(TE85L,F,M from Toshiba Semiconductor and Storage is a dual N-Channel MOSFET array. It offers a drain-to-source voltage (Vdss) of 20V and a continuous drain current (Id) of 3A at 25°C.
This MOSFET array features a low on-resistance (Rds On) of 49mOhm at 1.5A and 4.5V, a gate threshold voltage (Vgs(th)) of 1.2V at 200μA, and a maximum power dissipation of 330mW. The input capacitance (Ciss) is 590pF at 10V, and the gate charge (Qg) is 7.5nC at 5V.
Designed for surface mount applications, the TPCF8201(TE85L,F,M comes in an 8-SMD, Flat Lead package, specifically VS-8 (2.9x1.5). It operates at temperatures up to 150°C (TJ) and includes a logic-level gate feature.
This component is classified under Discrete Semiconductor Products and Transistors - FETs, MOSFETs - Single. It is suitable for various electronic applications requiring efficient switching and power management.
The drain-to-source voltage (Vdss) is 20V.
The continuous drain current (Id) is 3A at 25°C.
The maximum on-resistance (Rds On) is 49mOhm at 1.5A and 4.5V.
The operating temperature is up to 150°C (TJ).
It is in an 8-SMD, Flat Lead package, specifically VS-8 (2.9x1.5), and is surface mountable.