| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
301,000 pcs
|
301000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
42,000 pcs
|
42000 pcs | On Request | 1 | On Request | On Request | 07+PBF | On Request | On Request | |
|
2,213 pcs
|
2213 pcs | On Request | 1 | On Request | On Request | 07+ | On Request | On Request |
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The Toshiba TPCF8201 is a Silicon N-Channel MOS Type (U-MOS III) Field Effect Transistor. It is specifically designed for applications in notebook PCs and portable equipment.
Key electrical characteristics include a low drain-source ON resistance of 38 mΩ (typ.) and a high forward transfer admittance of 5.4 S (typ.). It also offers a low leakage current of 10 µA (max) at 20V drain-source voltage. The enhancement-model threshold voltage (Vth) ranges from 0.5 to 1.2V.
Maximum ratings include a drain-source voltage (V DSS) of 20V and a gate-source voltage (V GSS) of ±12V. The device can handle a continuous drain current of 3A and a pulse drain current of 12A. Thermal characteristics are important for operation, with channel temperature rated up to 150°C and storage temperature ranging from -55°C to 150°C.
The TPCF8201 is supplied in a compact package with a typical weight of 0.011g, making it suitable for space-constrained designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 20 V.
The typical ON resistance is 38 mΩ.
The typical forward transfer admittance is 5.4 S.
The maximum leakage current is 10 µA at 20V drain-source voltage.
The threshold voltage ranges from 0.5 to 1.2 V.
The maximum channel temperature is 150 °C.
The storage temperature range is from -55 °C to 150 °C.