TPCF8107LF The Toshiba TPCF8107LF is a P-Channel MOSFET with a 30V drain-source voltage and 6A continuous drain current. It is housed in a surface-mount VS-8 package.
Mfr Part #:

TPCF8107LF

Available from 1 distributors
Mfr Name: Toshiba
Toshiba
The Toshiba TPCF8107LF is a P-Channel MOSFET with a 30V drain-source voltage and 6A continuous drain current. It is housed in a surface-mount VS-8 package.
✓ Total Stock: 38,000 pcs

TPCF8107LF Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
38,000 pcs
38000 pcs On Request 1 2012 On Request 12068 On Request On Request

TPCF8107LF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Drain to Source Voltage (Vdss)
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Vgs(th) (Max) @ Id

TPCF8107LF Description

Short technical summary and product information.

The TPCF8107LF from Toshiba is a P-Channel MOSFET designed for various electronic applications. It features a maximum drain-source voltage (Vdss) of 30V and can handle a continuous drain current (Id) of 6A at 25°C.

 

The MOSFET exhibits a low on-resistance (Rds On) of 28 mOhm at a gate-source voltage (Vgs) of 10V and a drain current (Id) of 3A. Its gate threshold voltage (Vgs(th)) is 2V at 100µA, and the maximum gate source voltage is ±20V.

 

This device operates at a maximum junction temperature of 150°C and has a power dissipation of 700mW at 25°C ambient temperature. It is packaged in a VS-8 (2.9x1.5) surface-mount package, suitable for compact designs.

 

The TPCF8107LF utilizes MOSFET (Metal Oxide) technology. It has an input capacitance (Ciss) of 970pF at 10V and a gate charge (Qg) of 22nC at 10V. The component is supplied in Cut Tape (CT) packaging.

TPCF8107LF Quick Information

Product Type: MOSFET
Series: U-MOSVI
Canonical Name: TPCF8107LF P-Channel MOSFET
Subcategory: Single

TPCF8107LF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

TPCF8107LF Features

  • P-Channel MOSFET technology.
  • 30V drain-source voltage rating.
  • 6A continuous drain current.
  • Low 28 mOhm on-resistance.
  • Surface mount VS-8 package.

TPCF8107LF Applications

  • Used for load switching in portable devices.
  • Suitable for battery protection circuits.
  • Ideal for DC-DC converter applications.
  • Power management in low-voltage systems.

TPCF8107LF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the TPCF8107LF?

30V

What is the maximum continuous drain current?

6A at Ta = 25°C

What is the maximum gate threshold voltage?

2V at Id = 100µA

What is the maximum on-resistance?

28mOhm at Id = 3A, Vgs = 10V

What is the gate charge?

22nC at Vgs = 10V

What package is the TPCF8107LF available in?

VS-8 (2.9x1.5) surface mount

What is the operating temperature range?

Maximum junction temperature 150°C

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