| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
38,000 pcs
|
38000 pcs | On Request | 1 | 2012 | On Request | 12068 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Drain to Source Voltage (Vdss) | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The TPCF8107LF from Toshiba is a P-Channel MOSFET designed for various electronic applications. It features a maximum drain-source voltage (Vdss) of 30V and can handle a continuous drain current (Id) of 6A at 25°C.
The MOSFET exhibits a low on-resistance (Rds On) of 28 mOhm at a gate-source voltage (Vgs) of 10V and a drain current (Id) of 3A. Its gate threshold voltage (Vgs(th)) is 2V at 100µA, and the maximum gate source voltage is ±20V.
This device operates at a maximum junction temperature of 150°C and has a power dissipation of 700mW at 25°C ambient temperature. It is packaged in a VS-8 (2.9x1.5) surface-mount package, suitable for compact designs.
The TPCF8107LF utilizes MOSFET (Metal Oxide) technology. It has an input capacitance (Ciss) of 970pF at 10V and a gate charge (Qg) of 22nC at 10V. The component is supplied in Cut Tape (CT) packaging.
30V
6A at Ta = 25°C
2V at Id = 100µA
28mOhm at Id = 3A, Vgs = 10V
22nC at Vgs = 10V
VS-8 (2.9x1.5) surface mount
Maximum junction temperature 150°C