| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
200,000 pcs
|
200000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
110 pcs
|
110 pcs | On Request | 1 | On Request | On Request | 1347+ | On Request | On Request |
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| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The TPCF8107,LF from Toshiba is a P-Channel MOSFET designed for various electronic applications. It features a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 6A at 25°C. The on-resistance (Rds(on)) is specified at a maximum of 28 mOhm at 3A and 10V gate-source voltage.
This MOSFET utilizes Metal Oxide Semiconductor technology and is packaged in a VS-8 (2.9x1.5) surface-mount package. It operates at a maximum junction temperature of 150°C and has a power dissipation of 700mW (Ta). Key electrical parameters include input capacitance (Ciss) of 970pF at 10V and gate charge (Qg) of 22nC at 10V.
The TPCF8107,LF is suitable for applications requiring efficient switching and power management. Its surface-mount design facilitates integration into compact circuit boards. The component is part of the U-MOSVI series.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vdss) for the TPCF8107,LF is 30V.
The continuous drain current (Id) for the TPCF8107,LF at 25°C is 6A.
The maximum on-resistance (Rds(on)) for the TPCF8107,LF is 28 mOhm at 3A and 10V.
The TPCF8107,LF MOSFET is in a VS-8 (2.9x1.5) surface-mount package.
The maximum operating temperature (junction temperature) for the TPCF8107,LF is 150°C.
The TPCF8107,LF is RoHS3 Compliant.