| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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70,000 pcs
|
70000 pcs | On Request | 1 | On Request | On Request | 1131+ | On Request | On Request | |
|
2,747 pcs
|
2747 pcs | On Request | 1 | On Request | On Request | 1131+ | On Request | On Request |
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The Toshiba TPCF8107 is a P-Channel Silicon MOSFET from the U-MOS V generation, suitable for power management applications. It features a small footprint due to its compact and thin package, making it ideal for space-constrained designs.
Key electrical characteristics include a low drain-source on-resistance of 22 mΩ (typical) at VGS = -10 V, and a drain-source breakdown voltage of -30 V. The gate threshold voltage ranges from -0.8 V to -2.0 V. It also exhibits a low leakage current of -10 µA (maximum) at VDS = -30 V.
This MOSFET is designed for applications such as Lithium-Ion secondary batteries, power management switches, and notebook PCs. The device operates within a channel temperature range of 150°C and a storage temperature range of -55°C to 150°C.
The TPCF8107 is packaged in a VS-8 surface-mount package. It is sensitive to electrostatic discharge and should be handled with care.
The drain-source voltage rating is -30 V.
The continuous drain current rating is -6 A.
The typical on-resistance is 22 mΩ at a gate-source voltage of -10 V.
The gate threshold voltage ranges from -0.8 V to -2.0 V.
The maximum power dissipation is 2.5 W.
The maximum channel temperature is 150 °C.
The TPCF8107 is available in a VS-8 surface mount package.