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TPCF8103 The Toshiba TPCF8103 is a P-Channel MOSFET featuring a 30V breakdown voltage and 2.7A continuous drain current. It offers a low drain-source resistance of 160mΩ.
Mfr Part #:

TPCF8103

Available from 1 distributors
Mfr Name: Toshiba
Toshiba
The Toshiba TPCF8103 is a P-Channel MOSFET featuring a 30V breakdown voltage and 2.7A continuous drain current. It offers a low drain-source resistance of 160mΩ.
✓ Total Stock: 5,000 pcs

TPCF8103 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
5,000 pcs
On Request
5000 pcs On Request 1 On Request On Request 03+ On Request On Request
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TPCF8103 Specifications Quick View

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TPCF8103 Description

Short technical summary and product information.

The Toshiba TPCF8103 is a P-Channel MOSFET designed for various electronic applications. It boasts a breakdown voltage of 30V and can handle a continuous drain current of up to 2.7A. The device exhibits a low drain-source on-resistance of 160mΩ minimum, contributing to efficient power handling.

 

With a maximum power dissipation of 2.5W and a maximum operating temperature of 150°C, the TPCF8103 is suitable for demanding environments. The component is specified with 8 terminals and is RoHS3 compliant.

 

This MOSFET is part of Toshiba's range of semiconductor devices. Its specifications make it a viable option for switching and amplification circuits where P-Channel MOSFETs are required.

TPCF8103 Quick Information

Product Type: MOSFET
Canonical Name: TPCF8103 P-Channel MOSFET
Subcategory: P-Channel MOSFET

TPCF8103 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

TPCF8103 Features

  • P-Channel MOSFET with 30V breakdown voltage.
  • Handles 2.7A continuous drain current.
  • Low 160mΩ minimum drain-source resistance.
  • Maximum operating temperature of 150°C.
  • RoHS3 compliant.

TPCF8103 Applications

  • High-side load switching in portable devices.
  • Battery protection circuits for consumer electronics.
  • Power management in low-voltage DC systems.
  • Signal amplification in small-signal audio stages.

TPCF8103 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the breakdown voltage of the TPCF8103 MOSFET?

The breakdown voltage of the TPCF8103 MOSFET is 30V minimum.

What is the continuous drain current for the TPCF8103?

The TPCF8103 can handle a continuous drain current of 2.7A.

What is the minimum drain-source resistance of the TPCF8103?

The minimum drain-source resistance for the TPCF8103 is 160mΩ.

What is the maximum operating temperature for the TPCF8103?

The TPCF8103 has a maximum operating temperature of 150°C.

Is the TPCF8103 RoHS compliant?

The TPCF8103 is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the TPCF8103?

The Moisture Sensitivity Level (MSL) for the TPCF8103 is 1 Unlimited.

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