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TPCF8101 The Toshiba TPCF8101 is a P-Channel MOSFET designed for various electronic applications. It offers a 12V drain-source voltage and 6A continuous drain current.
Mfr Part #:

TPCF8101

Available from 2 distributors
Mfr Name: Toshiba
Toshiba
The Toshiba TPCF8101 is a P-Channel MOSFET designed for various electronic applications. It offers a 12V drain-source voltage and 6A continuous drain current.
✓ Total Stock: 70,000 pcs

TPCF8101 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
66,000 pcs
On Request
66000 pcs On Request 1 On Request On Request 12NPB On Request On Request
Smaxon Electronics ✓
Non-Authorised Inventory information
4,000 pcs
On Request
4000 pcs On Request 1 On Request On Request 1122+ On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

TPCF8101 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Gate Charge
Input Capacitance
Mounting Type
Package / Case
Power Dissipation
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TPCF8101 Description

Short technical summary and product information.

The TPCF8101 from Toshiba Electronic Devices and Storage Corporation is a P-Channel MOSFET suitable for discrete semiconductor applications. This component features a maximum gate-source voltage of ±8V and a drain-source voltage of 12V. It can handle a continuous drain current of 6A at 25°C and has a maximum power dissipation of 700mW at 25°C.

 

The MOSFET is housed in an 8-SMD, Flat Lead package and is designed for surface-mount (SMT) technology. Key electrical characteristics include a maximum gate charge of 18nC at 5V and an input capacitance of 1600pF at 10V. The gate-source threshold voltage is typically 1.2V at 200μA.

 

This component is categorized under RF FETs, MOSFETs and is part of the single MOSFET family. Its specifications make it suitable for applications requiring efficient switching and power control within its operational limits.

TPCF8101 Quick Information

Product Type: MOSFET
Canonical Name: TPCF8101 P-Channel MOSFET
Subcategory: RF FETs, MOSFETs

TPCF8101 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

TPCF8101 Features

  • P-Channel MOSFET with 12V drain-source voltage.
  • Continuous drain current of 6A at 25°C.
  • Maximum power dissipation of 700mW.
  • Surface-mount (SMT) 8-SMD, Flat Lead package.
  • Gate charge of 18nC at 5V.

TPCF8101 Applications

  • Ideal for low-voltage load switching.
  • Suitable for power management circuits.
  • Used in battery protection applications.
  • Designed for compact SMD assembly.

TPCF8101 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the continuous drain current for the TPCF8101 MOSFET?

The continuous drain current is 6A at 25°C.

What is the maximum power dissipation of the TPCF8101?

The maximum power dissipation is 700mW at 25°C.

What is the mounting type for the TPCF8101?

The mounting type is SMD (SMT).

What is the RoHS status of the TPCF8101?

The RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the TPCF8101?

The Moisture Sensitivity Level is 1 Unlimited.

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