| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
50,000 pcs
|
50000 pcs | On Request | 1 | On Request | On Request | 14+PBF | On Request | On Request |
| Category | |
| Manufacturer Name | |
| SVHC Present |
The Toshiba TPCF8003 is an N-Channel MOSFET suitable for various electronic applications. It is manufactured by Toshiba and comes in an SMD/SMT package for surface mounting.
Key electrical specifications include a breakdown voltage of 30V and a continuous current rating of 7A. The on-resistance (RDS(on)) is a maximum of 23mΩ, with a typical input capacitance of 1.27nF. The device also exhibits a typical rise time of 2.8ns and a fall time of 22ns, with a power dissipation capability of 2.5W.
This MOSFET is designed for efficient switching and power management in electronic circuits. Its surface mount package facilitates integration into compact PCB designs.
The maximum breakdown voltage is 30V.
The maximum continuous drain current is 7A.
The maximum on-resistance is 23mΩ.
The TPCF8003 is offered in a surface mount SMD/SMT package.
The maximum power dissipation is 2.5W.