| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
26,000 pcs
|
26000 pcs | On Request | 1 | On Request | On Request | 12+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Mounting Type | |
| Package / Case | |
| Power Dissipation | |
| SVHC Present |
The Toshiba TPCF8002 is an N-channel power MOSFET with a drain-source voltage (Vds) of up to 30V and a continuous drain current (Id) of 7A. It offers a low drain-source on-resistance (Rds(on)) of 0.032 Ohms at Vgs = 4.5V and 0.021 Ohms at Vgs = 10V. The typical total gate charge (Qg) is 11.5 nC.
This MOSFET is part of Toshiba's U-MOS IV generation and is suitable for applications such as mobile equipment and notebook PCs. It comes in a VS-8 surface mount package with 8 pins.
The absolute maximum ratings include a power dissipation (Pd) of 2.5W. The device polarity is N-channel.
The maximum drain-source voltage is 30V.
The maximum drain current is 7A.
The maximum drain-source on-resistance is 0.032Ω at Vgs=4.5V and 0.021Ω at Vgs=10V.
The TPCF8002 comes in a VS-8 surface mount package with 8 pins.
The typical total gate charge is 11.5 nC.
The maximum power dissipation is 2.5W.