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TPCC8137 The Toshiba TPCC8137 is a Silicon P-Channel MOSFET. It features a breakdown voltage of 20V and a minimum Drain-Source Resistance of 10mΩ.
Mfr Part #:

TPCC8137

Available from 1 distributors
Mfr Name: Toshiba
Toshiba
The Toshiba TPCC8137 is a Silicon P-Channel MOSFET. It features a breakdown voltage of 20V and a minimum Drain-Source Resistance of 10mΩ.
✓ Total Stock: 74,065 pcs

TPCC8137 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
74,065 pcs
On Request
74065 pcs On Request 1 On Request On Request 1414+ On Request On Request
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TPCC8137 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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Manufacturer Name
Operating Temperature
Power Dissipation
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TPCC8137 Description

Short technical summary and product information.

The Toshiba TPCC8137 is a Silicon P-Channel MOSFET designed for various electronic applications. This component offers a breakdown voltage of 20V and a minimum Drain-Source Resistance of 10mΩ. It can handle a maximum power dissipation of 30W and operates at temperatures up to 150°C.

 

With 8 terminals, the TPCC8137 is suitable for integration into a wide range of circuit designs. Its P-Channel MOSFET characteristics make it a versatile component for switching and amplification tasks. The device is manufactured by Toshiba, a recognized leader in semiconductor technology.

 

This MOSFET is designed for reliable performance in demanding environments. Its specifications suggest suitability for applications requiring efficient power handling and precise control. The operating temperature range ensures functionality across various conditions.

TPCC8137 Quick Information

Product Type: MOSFET
Canonical Name: TPCC8137 Silicon P-Channel MOSFET
Subcategory: P-Channel

TPCC8137 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

TPCC8137 Features

  • Silicon P-Channel MOSFET technology.
  • 20V minimum breakdown voltage.
  • 10mΩ minimum Drain-Source Resistance.
  • Maximum power dissipation of 30W.
  • Operates up to 150°C.

TPCC8137 Applications

  • Suitable for power switching circuits.
  • Ideal for signal amplification tasks.
  • Used in general electronic designs.
  • Component for control circuitry.

TPCC8137 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the breakdown voltage of the TPCC8137 MOSFET?

The breakdown voltage of the TPCC8137 MOSFET is 20V.

What is the minimum Drain-Source Resistance for the TPCC8137?

The minimum Drain-Source Resistance for the TPCC8137 is 10mΩ.

What is the maximum operating temperature for the TPCC8137?

The maximum operating temperature for the TPCC8137 is 150°C.

What is the RoHS status of the TPCC8137?

The TPCC8137 is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the TPCC8137?

The Moisture Sensitivity Level (MSL) for the TPCC8137 is 1 Unlimited.

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