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TPCC8136.LQ The Toshiba TPCC8136.LQ is a P-Channel MOSFET with a 20V drain-source voltage and a continuous drain current of 9.4A. It features a surface mountable 8-TSON Advance package.
Mfr Part #:

TPCC8136.LQ

Available from 1 distributors
Mfr Name: Toshiba
Toshiba
The Toshiba TPCC8136.LQ is a P-Channel MOSFET with a 20V drain-source voltage and a continuous drain current of 9.4A. It features a surface mountable 8-TSON Advance package.
✓ Total Stock: 913 pcs
$ Price Range: $2.56

TPCC8136.LQ Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Smaxon Electronics ✓
Non-Authorised Inventory information
913 pcs
On Request
913 pcs On Request 1 On Request On Request 12+ On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

TPCC8136.LQ Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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TPCC8136.LQ Description

Short technical summary and product information.

The Toshiba TPCC8136.LQ is a P-Channel MOSFET designed for power switching applications. It offers a maximum drain-source voltage (Vdss) of 20V and a continuous drain current (Ta) of 9.4A. The MOSFET has a low on-resistance of 16mOhm at 9.4A and 4.5V Vgs.

 

Key electrical characteristics include a gate charge (Qg) of 36nC at 5V Vgs and an input capacitance (Ciss) of 2350pF at 10V Vds. The gate source voltage (Vgs) maximum is ±12V, with a threshold voltage (Vgs(th)) of 1.2V at 1mA. The device operates within a temperature range of -40°C to 150°C.

 

Packaged in an 8-TSON Advance (3.1x3.1) format, the TPCC8136.LQ is designed for surface mounting. Its power dissipation is rated at 700mW (Ta) and 18W (Tc), making it suitable for various electronic designs requiring efficient power control.

TPCC8136.LQ Quick Information

Product Type: MOSFET
Canonical Name: TPCC8136.LQ P-Channel MOSFET
Subcategory: Single

TPCC8136.LQ Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

TPCC8136.LQ Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

TPCC8136.LQ Features

  • P-Channel MOSFET with 20V drain-source voltage.
  • 9.4A continuous drain current capability.
  • Low 16mOhm on-resistance at 4.5V Vgs.
  • Surface mount 8-TSON Advance package.
  • Operates up to 150°C.

TPCC8136.LQ Applications

  • Suitable for power switching circuits.
  • Ideal for voltage regulation applications.
  • Used in battery management systems.
  • Applicable in load switch designs.

TPCC8136.LQ FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the TPCC8136.LQ?

The maximum drain-to-source voltage (Vdss) is 20V.

What is the maximum continuous drain current of this MOSFET?

The maximum continuous drain current is 9.4A at ambient temperature.

What is the on-resistance of the TPCC8136.LQ?

The maximum on-resistance is 16mOhm at a drain current of 9.4A and gate voltage of 4.5V.

What package does the TPCC8136.LQ come in?

It comes in a surface-mount 8-PowerVDFN package, specifically the 8-TSON Advance (3.1x3.1) supplier device package.

What is the maximum operating temperature for this device?

The maximum operating junction temperature is 150°C.

What is the gate threshold voltage of the TPCC8136.LQ?

The maximum gate threshold voltage is 1.2V at a drain current of 1mA.

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