BC847B/215
Nexperia USA Inc.
The Nexperia USA Inc. BC847B/215 is a bipolar transistor. It is RoHS3 Compliant and has an MSL Level 1 rating.
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40,500 pcs
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40500 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
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The Toshiba TPCC8131LQ is a P-Channel MOSFET belonging to the U-MOS technology family. It is designed for applications such as Lithium-Ion secondary batteries and power management switches.
Key electrical characteristics include a low drain-source on-resistance of 13.5 mΩ at a gate-source voltage of -10 V. The device has a drain-source breakdown voltage of 30 V and a gate threshold voltage ranging from -0.8 V to -2.0 V under specific test conditions. The maximum leakage current is rated at -10 A at -30 V drain-source voltage.
This MOSFET is housed in a small, thin 8-pin TSON package, making it suitable for space-constrained designs. Its surface mount capability further enhances its ease of integration into electronic circuits. The enhancement mode operation simplifies its use in various power switching applications.
30V.
13.5 mOhm at VGS=-10V.
-10A maximum.
-0.8V to -2.0V at VDS=-10V, ID=-0.2mA.
8-Pin TSON surface-mount package.
P-Channel.
Silicon P-Channel MOS (U-MOS).