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TPCC8131,LQ The Toshiba TPCC8131,LQ is a P-Channel MOSFET designed for power management applications. It features a 30V breakdown voltage and low on-resistance.
Mfr Part #:

TPCC8131,LQ

Available from 1 distributors
Mfr Name: Toshiba
Toshiba
The Toshiba TPCC8131,LQ is a P-Channel MOSFET designed for power management applications. It features a 30V breakdown voltage and low on-resistance.
✓ Total Stock: 400 pcs

TPCC8131,LQ Available from 1 distributor

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✓ Non-Authorised
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Optech Co.,Limited ✓
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400 pcs
On Request
400 pcs On Request 1 On Request On Request 1407+ On Request On Request
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TPCC8131,LQ Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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TPCC8131,LQ Description

Short technical summary and product information.

The Toshiba TPCC8131,LQ is a P-Channel MOSFET belonging to the U-MOS Silicon P-Channel MOS family. It is designed for applications such as Lithium-Ion Secondary Batteries and Power Management Switches.

 

Key electrical characteristics include a low drain-source on-resistance of 13.5 mΩ (typ.) at VGS = -10 V and a low leakage current of -10 A (max) at VDS = -30 V. The enhancement mode device has a gate threshold voltage (Vth) ranging from -0.8 V to -2.0 V under specific test conditions (VDS = -10 V, ID = -0.2 mA).

 

This MOSFET is housed in a small, thin 8-Pin TSON package, suitable for surface mount applications. Its design prioritizes efficiency and compact form factor for modern electronic devices.

TPCC8131,LQ Quick Information

Product Type: MOSFET
Canonical Name: Toshiba TPCC8131,LQ P-Channel MOSFET
Subcategory: P-Channel

TPCC8131,LQ Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

TPCC8131,LQ Features

  • P-Channel MOSFET for power management.
  • Low drain-source on-resistance: 13.5 mΩ typical.
  • 30V drain-source breakdown voltage.
  • Small, thin 8-Pin TSON package.
  • Suitable for Lithium-Ion battery applications.

TPCC8131,LQ Applications

  • Ideal for power management switches.
  • Used in Lithium-Ion secondary batteries.
  • Compact design for portable electronics.

TPCC8131,LQ FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage of the TPCC8131LQ?

The drain-source breakdown voltage (V(BR)DSS) is -30V.

What is the typical drain-source on-resistance?

The typical on-resistance is 13.5 mOhm at VGS = -10V.

What is the gate threshold voltage range?

The gate threshold voltage (Vth) ranges from -0.8V to -2.0V at VDS = -10V, ID = -0.2 mA.

What is the maximum continuous drain current?

The maximum continuous drain current is -10A at VDS = -30V.

What package is the TPCC8131LQ available in?

The device is available in an 8-Pin TSON surface-mount package.

What mounting type does this MOSFET use?

It uses surface mount mounting.

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