| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
40,500 pcs
|
40500 pcs | On Request | 1 | 8 | On Request | 19+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| SVHC Present |
The Toshiba TPCC8131 is a Silicon P-Channel MOSFET designed for electronic applications. It offers a maximum Drain-Source Voltage of 30V and can handle a maximum power dissipation of 20W. The component operates at a maximum temperature of 150°C.
This MOSFET is manufactured by Toshiba and falls under the category of single transistors. Its specifications make it suitable for various switching and amplification tasks within electronic circuits. Further details regarding its specific applications and electrical characteristics can be found in its datasheet.
The maximum Drain-Source Voltage for the TPCC8131 is 30V.
The maximum power dissipation for the TPCC8131 is 20W.
The maximum operating temperature for the TPCC8131 is 150°C.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.
The REACH status is REACH Unaffected.