BC847B/215
Nexperia USA Inc.
The Nexperia USA Inc. BC847B/215 is a bipolar transistor. It is RoHS3 Compliant and has an MSL Level 1 rating.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
9,974 pcs
|
9974 pcs | On Request | 1 | On Request | On Request | 1551+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| SVHC Present |
The Toshiba TPCC8106 is a P-Channel MOSFET designed for power management applications. It features a minimum drain-source resistance of 42.9mΩ at VGS=10V and ID=1A, ensuring efficient switching with low conduction losses. The device can withstand a maximum drain-source breakdown voltage of 60V and dissipates up to 46.8W of power. It operates at a maximum junction temperature of 175°C, making it suitable for high-temperature environments. The TPCC8106 is part of Toshiba's TPCC series of P-Channel MOSFETs, commonly used in portable equipment and notebook PC applications. For detailed specifications including gate charge, capacitance, and package dimensions, refer to the official Toshiba datasheet.
The minimum drain-source resistance is 42.9mΩ at VGS=10V and ID=1A.
The minimum drain-source breakdown voltage is 60V.
The maximum power dissipation is 46.8W.
The maximum junction temperature is 175°C.