| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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26,620 pcs
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26620 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request | |
|
2,909 pcs
|
2909 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
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The Toshiba TPCC8103 is a P-Channel MOSFET belonging to the small signal transistor family. It is designed for general-purpose switching applications and features a breakdown voltage of 30V and a maximum drain current of 18A. The device has a low on-resistance of 0.025 ohm.
This MOSFET utilizes Metal-Oxide Semiconductor (MOS) technology and operates in enhancement mode. It is configured as a single element with a built-in diode. The component is housed in a small outline rectangular package suitable for surface mounting.
Key electrical characteristics include a P-channel configuration and silicon transistor element material. The device has 5 terminals and is designed for efficient switching operations.
The minimum breakdown voltage is 30 V.
The maximum drain current (ID) is 18 A.
The maximum drain-source on-resistance is 0.025 ohm.
It is a P-Channel MOSFET with enhancement mode operation.
The TPCC8103 is supplied in a small outline surface mount package.