TPCC8067-H,LQ(S The Toshiba TPCC8067-H,LQ(S is an N-Channel MOSFET designed for surface mount applications. It features a 30V drain-to-source voltage and a maximum current rating of 9A.
Mfr Part #:

TPCC8067-H,LQ(S

Available from 1 distributors
Mfr Name: Toshiba
Toshiba
The Toshiba TPCC8067-H,LQ(S is an N-Channel MOSFET designed for surface mount applications. It features a 30V drain-to-source voltage and a maximum current rating of 9A.
✓ Total Stock: 4,000 pcs
$ Price Range: $2.56

TPCC8067-H,LQ(S Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
4,000 pcs
4000 pcs On Request 1 On Request On Request 14+ On Request On Request

TPCC8067-H,LQ(S Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

TPCC8067-H,LQ(S Description

Short technical summary and product information.

Toshiba TPCC8067-H,LQ(S is an N-Channel MOSFET designed for low-voltage power switching applications. With a maximum drain-source voltage of 30V and continuous drain current of 9A, it is suitable for a wide range of power management circuits.

 

The device features a maximum on-resistance of 25mΩ at Vgs=10V and Id=4.5A, ensuring efficient operation. It supports gate drive voltages from 4.5V to 10V and has a maximum gate threshold voltage of 2.3V. Input capacitance is 690pF at Vds=10V and gate charge is 9.5nC at Vgs=10V, aiding fast switching.

 

The MOSFET is housed in an 8-PowerVDFN package, also known as 8-TSON Advance (3.1x3.1), for surface-mount installation. Power dissipation is rated at 700mW at ambient temperature and 15W at case temperature, with a maximum junction temperature of 150°C.

 

This combination of ratings makes the TPCC8067-H,LQ(S suitable for load switching, DC-DC converters, and other low-voltage power control applications. Its compact surface-mount package supports space-constrained PCB designs.

TPCC8067-H,LQ(S Quick Information

Product Type: MOSFET
Canonical Name: TPCC8067-H,LQ(S N-Channel MOSFET
Subcategory: N-Channel

TPCC8067-H,LQ(S Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

TPCC8067-H,LQ(S Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

TPCC8067-H,LQ(S Features

  • N-Channel MOSFET rated for 30V drain-source voltage.
  • Supports 9A continuous drain current.
  • Low 25mΩ maximum on-resistance.
  • Compact 8-TSON Advance surface-mount package.
  • Operates with 4.5V and 10V gate drives.

TPCC8067-H,LQ(S Applications

  • Suitable for power switching circuits.
  • Used in DC-DC converter designs.
  • Common in battery-powered load switching.
  • Ideal for low-voltage power management.

TPCC8067-H,LQ(S FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the TPCC8067-H,LQ(S?

The maximum drain-to-source voltage is 30V.

What is the maximum continuous drain current?

The maximum continuous drain current is 9A at ambient temperature (Ta).

What is the on-resistance of this MOSFET?

The maximum on-resistance is 25mΩ at Id=4.5A and Vgs=10V.

What package is the TPCC8067-H,LQ(S available in?

It is available in an 8-PowerVDFN package, also known as 8-TSON Advance (3.1x3.1) surface-mount package.

What is the maximum junction temperature?

The maximum junction temperature is 150°C.

What is the gate threshold voltage?

The maximum gate threshold voltage is 2.3V at Id=100µA.

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