| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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28,544 pcs
|
28544 pcs | On Request | 1 | On Request | On Request | 1812+ | On Request | On Request | |
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | 1639+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Input Capacitance | |
| SVHC Present |
The Toshiba TPCC8067-H is a Silicon N-Channel MOSFET. It is manufactured by Toshiba and designed for surface mount applications. This MOSFET offers a Drain-Source Voltage of 30V and a maximum On-Resistance (RDS(on)) of 25mΩ at a gate-source voltage of 10V.
Key electrical characteristics include an input capacitance of 690pF, a typical rise time of 2.1ns, and a typical fall time of 2ns. The maximum power dissipation is rated at 15W. The operating temperature range for this component is from -55°C to 150°C.
This component is suitable for various electronic designs requiring a reliable N-Channel MOSFET. Its surface mount package facilitates integration into compact circuit boards.
30V
25mΩ at Vgs=10V
690pF (typical)
-55°C to 150°C
15W
Rise time: 2.1ns, Fall time: 2ns