| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
23,144 pcs
|
23144 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request | |
|
6,000 pcs
|
6000 pcs | On Request | 1 | On Request | On Request | 13+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Input Capacitance | |
| Operating Temperature |
The Toshiba TPCC8066-H is a Silicon N-Channel MOSFET. It is manufactured by Toshiba and designed for surface mount applications. This MOSFET offers a Drain-Source Voltage of 30V and a maximum On-Resistance (RDS(on)) of 25mΩ at a VGS of 10V. It has an input capacitance of 690pF, a rise time of 2.1ns, and a fall time of 2ns.
The device can handle a maximum power dissipation of 15W and operates within a temperature range of -55°C to 150°C. Its surface mount package makes it suitable for integration into compact electronic designs.
This component is part of the broader category of discrete semiconductor products, specifically single MOSFETs, and is often used in power switching and amplification circuits where efficient control of current is required.
30V.
25mΩ at VGS=10V.
690pF.
Rise time 2.1ns, fall time 2ns.
15W.
-55°C to 150°C.
Surface mount.