| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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117,000 pcs
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117000 pcs | On Request | 1 | On Request | On Request | 10+ | On Request | On Request |
| Category | |
| Manufacturer Name |
The Toshiba TPCC8006-H is an N-Channel MOSFET designed for various electronic applications. It features a breakdown voltage of 30V and can handle a continuous drain current of 22A at 25°C.
Key electrical characteristics include a maximum gate charge of 27nC at 10V and a typical input capacitance of 2200pF at 10V. The gate-source threshold voltage is 2.3V at 200μA.
This MOSFET is packaged in an 8-VDFN Exposed Pad configuration and is suitable for Surface Mount Technology (SMT) assembly. It offers a maximum power dissipation of 700mW at ambient temperature (Ta) and 27W at case temperature (Tc).
Compliance information indicates RoHS3 compliance, Moisture Sensitivity Level 1, and REACH unaffected status, though these are noted as unverified.
30V.
22A at 25°C.
27nC at 10V.
2200pF at 10V.
2.3V at 200μA.
0.7W at ambient temperature and 27W at case temperature.
8-VDFN Exposed Pad.