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10,000 pcs
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10000 pcs | On Request | 1 | On Request | On Request | 13+ | On Request | On Request |
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The Toshiba TPCA8A08-H is a Silicon N-Channel MOSFET designed for various electronic applications. This component offers a breakdown voltage of 30V and a minimum drain-source on-resistance of 6.7mΩ at a drain current of 10A and gate-source voltage of 10V.
With a maximum power dissipation of 45W at 25°C and a maximum operating temperature of 150°C, the TPCA8A08-H is suitable for demanding environments. It comes in a SOP-8-ADV package, designed for surface mounting.
This MOSFET is manufactured by Toshiba and is part of their line of power transistors. Its specifications make it a reliable choice for power switching and amplification circuits where efficiency and performance are critical.
The breakdown voltage is 30V.
The minimum drain-source resistance is 6.7mΩ.
The maximum power dissipation is 45W.
The maximum operating temperature is 150°C.
The package type is SOP-8-ADV.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.