| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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58,158 pcs
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58158 pcs | On Request | 1 | On Request | On Request | 0806+ | On Request | On Request |
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The Toshiba TPCA8A02-H is a Silicon N-Channel MOSFET designed for various electronic applications. This component boasts a breakdown voltage of 30V and a maximum power dissipation of 45W, making it suitable for power switching and amplification tasks.
Key electrical characteristics include a minimum drain-source resistance of 6.7mΩ, ensuring efficient current flow. The MOSFET operates within a temperature range of up to 150°C, providing reliability in demanding environments. It is manufactured by Toshiba and comes in a SOP-8-ADV package.
This MOSFET is part of Toshiba's range of power transistors, offering robust performance for demanding applications. Its specifications make it a viable option for designers seeking a reliable N-Channel MOSFET for power management circuits.
The minimum breakdown voltage is 30V.
The maximum power dissipation is 45W.
The minimum drain-source resistance is 6.7mΩ.
The maximum operating temperature is 150°C.
The TPCA8A02-H is in a SOP-8-ADV package.
The standard package quantity is 3000 units.