| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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25,520 pcs
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25520 pcs | On Request | 1 | On Request | On Request | 1407+ | On Request | On Request |
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| Power Dissipation |
The Toshiba TPCA8131 is a Silicon P-Channel MOSFET designed for various electronic applications. This component offers a breakdown voltage of 30V and a minimum drain-source resistance of 22mΩ.
With a maximum power dissipation of 27W and a maximum operating temperature of 150°C, the TPCA8131 is suitable for demanding environments. The device has 8 terminals, indicating a specific package type that would need further specification for mounting and termination details.
This MOSFET is manufactured by Toshiba, a well-known name in semiconductor technology. Its specifications suggest it is intended for power switching or amplification circuits where P-channel characteristics are required.
The breakdown voltage of the TPCA8131 is 30V maximum.
The minimum drain-source resistance is 22mΩ.
The TPCA8131 can operate up to a maximum temperature of 150°C.
The TPCA8131 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.