| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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28,505 pcs
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28505 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
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| SVHC Present |
The Toshiba TPCA8123 is a P Channel MOSFET designed for power applications. It offers a drain-source voltage of 60V and a continuous drain current of 50A, making it suitable for various switching and amplification tasks.
Key electrical characteristics include a gate threshold voltage of 3V at 1mA and a maximum on-resistance of 14.9 mOhms at 25A and 6V. The device has a maximum power dissipation of 84W.
Packaged in an SOP Advance surface-mount form factor, the TPCA8123 is designed for efficient thermal management. Its specifications make it a versatile component for power electronics circuits.
This MOSFET is manufactured by Toshiba and falls under the category of discrete semiconductor products, specifically single transistors.
The drain-source voltage for the TPCA8123 MOSFET is 60V.
The continuous drain current for the TPCA8123 MOSFET is 50A.
The gate threshold voltage for the TPCA8123 MOSFET is 3V at 1mA.
The on-resistance for the TPCA8123 MOSFET is 14.9 mOhms at 25A and 6V.
The package type for the TPCA8123 MOSFET is SOP Advance.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.