| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
226,000 pcs
|
226000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
11,800 pcs
|
11800 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request | |
|
5,480 pcs
|
5480 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Channels | |
| SVHC Present |
The Toshiba TPCA8109 is a Silicon P-Channel MOS Type MOSFET designed for various electronic applications. It features a breakdown voltage of -30V and a maximum power dissipation of 30W. The drain-source resistance is specified as 13mΩ minimum, with typical values of 4mΩ at 10V and 6mΩ at 4.5V.
This MOSFET operates with a gate-source threshold voltage of -1.74V. It has a maximum operating temperature of 150°C, making it suitable for demanding environments. The component is housed in a QFN8(5X6) package, indicating surface-mount capabilities.
Key electrical characteristics include a 1-channel configuration and 5 terminals. The TPCA8109 is part of Toshiba's range of P-Channel MOSFETs, often used in power switching and amplification circuits where a negative voltage supply is required.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum breakdown voltage of the TPCA8109 is 30V.
The typical drain-source resistance of the TPCA8109 is 4mΩ at 10V and 6mΩ at 4.5V.
The maximum power dissipation for the TPCA8109 is 30W.
The maximum operating temperature of the TPCA8109 is 150°C.
The TPCA8109 has 1 channel.
The package type for the TPCA8109 is QFN8(5X6).
