| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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100,000 pcs
|
100000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
25,000 pcs
|
25000 pcs | On Request | 1 | On Request | On Request | 1023+ | On Request | On Request | |
|
219 pcs
|
219 pcs | On Request | 1 | On Request | On Request | 12+ | On Request | On Request | |
| On Request | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
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The Toshiba TPCA8108 is a P Channel MOS Type Field Effect Transistor utilizing U-MOS III technology. It is engineered for applications such as high-side switching and motor drive circuits.
Key electrical characteristics include a drain-source breakdown voltage (V DSS) of -40V and a low typical drain-source ON-resistance (R DS(ON)) of 7.7 mΩ at 20A. The device also exhibits a high forward transfer admittance (|Yfs|) of 41S (typ.) and a maximum drain current (ID) of -40A continuous and -120A pulsed. The gate threshold voltage (Vth) ranges from -1.5V to -3.0V.
With a maximum continuous drain power dissipation (PD) of 45W at 25°C (case temperature), the TPCA8108 is suitable for demanding applications. It operates within a channel temperature range of -55°C to 150°C and a storage temperature range of -55°C to 150°C.
The component is housed in a compact and thin package, identified as 2-5Q1A, with a surface mount type. Its small footprint makes it ideal for space-constrained designs. The typical weight of the component is 0.080g.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-40 V
7.7 mΩ
-40 A
45 W
2-5Q1A
RoHS3 Compliant
1 Unlimited