| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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200,000 pcs
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200000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
5,356 pcs
|
5356 pcs | On Request | 1 | On Request | On Request | 1528+ | On Request | On Request |
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The Toshiba TPCA8105 is a P-channel, enhancement mode power MOSFET. It is designed for general-purpose power switching applications and offers a breakdown voltage of 12V and a maximum continuous drain current of 6A.
This MOSFET has a low drain-source on-resistance of 0.051 ohm at its maximum rating, contributing to efficient power handling. It also features a pulsed drain current capability of up to 24A and an avalanche energy rating of 25.1 mJ.
The component utilizes Metal-Oxide Semiconductor (MOS) FET technology and is constructed from silicon. It is housed in a small outline rectangular package, specifically the 2-5Q1A case code, and is designed for surface mounting.
With a built-in diode, the TPCA8105 is suitable for various power control circuits where efficient switching is required.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum breakdown voltage is 12V.
The continuous drain current is 6A maximum, and the pulsed drain current is 24A maximum.
The maximum drain-source on-resistance is 0.051 ohm.
It is a surface mount package with case code 2-5Q1A, small outline style, and dual flat terminals.
It is a P-channel MOSFET.
The avalanche energy rating is 25.1 mJ.
It operates in enhancement mode.