BC847B/215
Nexperia USA Inc.
The Nexperia USA Inc. BC847B/215 is a bipolar transistor. It is RoHS3 Compliant and has an MSL Level 1 rating.
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7,000 pcs
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7000 pcs | On Request | 1 | On Request | On Request | 16+ | On Request | On Request | |
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413 pcs
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413 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request | |
| On Request | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Toshiba TPCA8103 is a Silicon P-Channel MOSFET designed for various electronic applications. This component offers a maximum drain-source voltage of 30V and a low drain-source on-resistance of 6.8mΩ. It can handle a maximum power dissipation of 45W and operates up to a temperature of 150°C.
The TPCA8103 comes in a SOP package, suitable for surface-mount applications. Its specifications make it a reliable choice for power management and switching circuits where efficiency and performance are critical. The P-channel configuration allows for easy integration into designs requiring high-side switching or complementary pairs with N-channel MOSFETs.
This MOSFET is manufactured by Toshiba, a reputable name in semiconductor technology. Its robust design and electrical characteristics ensure stable operation in demanding environments. The compact SOP package facilitates efficient board space utilization.
The maximum drain-source voltage for the TPCA8103 is 30V.
The typical drain-source on-resistance of the TPCA8103 is 6.8mΩ.
The maximum power dissipation for the TPCA8103 is 45W.
The maximum operating temperature for the TPCA8103 is 150°C.
The TPCA8103 is available in a SOP package.