| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
50,000 pcs
|
50000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,649 pcs
|
2649 pcs | On Request | 1 | On Request | On Request | 0738+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Channels |
The Toshiba TPCA8102 is a Silicon P Channel MOS Type transistor. It is designed for various electronic applications requiring a P-channel MOSFET. Key electrical characteristics include a breakdown voltage of -30V and a maximum power dissipation of 30W. The drain-source on-resistance (Rds(on)) is specified at 4MΩ typical at 10V and 6MΩ typical at 4.5V. The gate-source threshold voltage (VTH) is typically -1.74V.
This transistor is housed in a QFN8(5X6) package, suitable for surface-mount applications. It has a maximum operating temperature of 150°C, ensuring reliability in demanding environments. The component has 1 channel and 5 terminals.
This part is part of Toshiba's line of field-effect transistors, offering reliable performance for switching and amplification tasks in electronic circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-30V
30W
4MΩ
6MΩ
150°C
QFN8(5X6)