| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,971 pcs
|
6971 pcs | On Request | 1 | On Request | On Request | 1402+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This Toshiba TPCA8065-H,LQ(S is an N-Channel MOSFET belonging to the Semi-Power MOSFET family, suitable for various power management applications. It features a maximum drain-to-source voltage (Vdss) of 30V and can handle a continuous current of up to 16A at ambient temperature.
The MOSFET exhibits a low on-resistance (Rds On) of 11.4mOhm at a gate-to-source voltage (Vgs) of 10V and a drain current (Id) of 8A. Key electrical characteristics include an input capacitance (Ciss) of 1600pF at 10V and a gate charge (Qg) of 20nC at 10V. The gate-to-source voltage has a maximum rating of ±20V, with a gate threshold voltage (Vgs(th)) of 2.3V at 200µA.
Packaged in an 8-PowerVDFN format, this component is designed for surface mounting. The supplier device package is specified as 8-SOP Advance (5x5). It operates at a junction temperature up to 150°C. The maximum power dissipation is rated at 1.6W when mounted on a PCB (Ta) and 25W when mounted on a heat sink (Tc).
Compliance information indicates RoHS3 compliance, Moisture Sensitivity Level 1, and REACH unaffected status, though these are based on internal data with low confidence.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 30 V.
The maximum continuous current rating is 16A.
The maximum on-resistance (Rds On) is 11.4mOhm when the drain current is 8A and the gate-to-source voltage is 10V.
The MOSFET is supplied in an 8-PowerVDFN package, also referred to as 8-SOP Advance (5x5).
The operating temperature range is up to 150°C (TJ).