| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,000 pcs
|
4000 pcs | On Request | 1 | On Request | On Request | 16+14+ | On Request | On Request | |
|
1,537 pcs
|
1537 pcs | On Request | 1 | On Request | On Request | 14+ | On Request | 2026-06-03 08:15:23 |
| Category | |
| Manufacturer Name | |
| Gate Charge | |
| Mounting Type | |
| Storage Temperature | |
| Tape & Reel |
The Toshiba TPCA8058-H is a Silicon N-Channel MOSFET from the U-MOS II -H series, designed for applications requiring high efficiency and high-speed switching. Its small footprint and thin package make it suitable for mobile equipment and notebook PCs.
Key electrical characteristics include a maximum drain-source voltage of 30V and a continuous drain current of 38A. The device features a low drain-source on-resistance of 3.0 mΩ (typical) at VGS = 4.5V and a typical gate charge of 12 nC. The threshold voltage ranges from 1.3V to 2.3V.
Thermal performance is supported by a channel-to-case thermal resistance of 2.4 °C/W. The maximum channel temperature is 150°C, with a storage temperature range of -55°C to 150°C.
The TPCA8058-H is packaged in an SOP Advance package, suitable for surface mounting.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.92 | $1.92 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 30 V.
The typical drain-source on-resistance is 3 mΩ at VGS = 4.5 V.
The maximum channel temperature is 150 °C.
The package type is SOP Advance.
Applications include high-efficiency DC-DC converters, notebook PCs, and mobile equipment.
The typical gate charge is 12 nC.
The RoHS status is RoHS3 Compliant.