| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
22,960 pcs
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22960 pcs | On Request | 1 | On Request | On Request | 23+ | On Request | 2026-06-03 08:15:23 |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Toshiba TPCA8057-H,LQ(M is an N-Channel MOSFET belonging to the U-MOS II-H series. It is designed for applications requiring high efficiency, such as DC-DC converters, notebook PCs, and mobile equipment.
Key electrical characteristics include a drain-source voltage (Vdss) of 30V and a continuous drain current (Ta) of 42A. The MOSFET features a low on-resistance (Rds On) of 2.6 mOhm at 21A and 10V, and a gate charge (Qg) of 61 nC at 10V. It operates within a temperature range of -55°C to 150°C.
This device comes in an 8-SOP Advance (5x5) package and is surface-mount compatible. The small footprint and thin package contribute to its suitability for space-constrained designs. The MOSFET is rated for a maximum power dissipation of 1.6W (Ta) or 57W (Tc).
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage rating is 30V.
The package is 8-PowerVDFN (also known as 8-SOP Advance 5x5).
The maximum junction temperature is 150°C.
The gate threshold voltage is 2.3V at 500µA.
The maximum on-resistance is 2.6mOhm at 21A and 10V gate drive.
The total gate charge is 61nC maximum at 10V.
The input capacitance is 5200pF maximum at 10V drain-source.