| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
200,000 pcs
|
200000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
73,440 pcs
|
73440 pcs | On Request | 1 | On Request | On Request | 1515+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Input Capacitance | |
| Mounting Type |
The Toshiba TPCA8057-H is a Silicon N-Channel MOSFET designed for various electronic applications. It features a maximum Drain-Source Voltage of 30V and a low maximum on-resistance (RDS(on)) of 2.6mΩ, indicating efficient current conduction.
This MOSFET is housed in a Surface Mount SOP package, making it suitable for automated assembly processes. Key electrical characteristics include an Input Capacitance of 5.2nF and typical Rise and Fall Times of 4.3ns and 6.3ns, respectively, which are important for switching performance.
With a maximum power dissipation of 57W and an operating temperature range from -55°C to 150°C, the TPCA8057-H is built to handle demanding thermal conditions. Its design makes it a component for power management and switching circuits where reliability and performance are critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) is 30V.
The maximum Rds(on) is 2.6mΩ.
The operating temperature range is -55°C to +150°C.
The device is available in a SOP surface mount package.
Typical rise time is 4.3ns and fall time is 6.3ns.
Maximum power dissipation is 57W.