| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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25,480 pcs
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25480 pcs | On Request | 1 | On Request | On Request | 13+ | On Request | On Request |
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The Toshiba TPCA8026-H is a general-purpose N-Channel Power MOSFET suitable for switching applications. It features a minimum breakdown voltage of 30V and a maximum continuous drain current of 45A.
This MOSFET has a low drain-source on-resistance of 0.0045 ohm, contributing to efficient power handling. The pulsed drain current can reach up to 135A, and it has an avalanche energy rating of 263 mJ.
The device utilizes Metal-Oxide Semiconductor (MOS) FET technology and is constructed with a silicon element. It is housed in a small outline plastic/epoxy package designed for surface mounting.
Key electrical characteristics include its enhancement mode operation and a built-in diode configuration. The TPCA8026-H is designed for general-purpose power applications requiring reliable switching performance.
The maximum continuous drain current is 45 A.
The minimum breakdown voltage (drain-source) is 30 V.
The maximum on-resistance is 0.0045 ohm.
It is a thin, 8-pin small outline surface mount package (2-5Q1A).
It is an N-channel MOSFET.
The single-pulse avalanche energy rating is 263 mJ.