| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
9,955 pcs
|
9955 pcs | On Request | 1 | On Request | On Request | 16+ | On Request | On Request | |
|
4,289 pcs
|
4289 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
850 pcs
|
850 pcs | On Request | 1 | On Request | On Request | 12+ | On Request | On Request |
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| Manufacturer Name | |
| Gate Charge | |
| Input Capacitance | |
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The Toshiba TPCA8016-H is a Silicon N-Channel MOS Type Field Effect Transistor, part of the Ultra-High-Speed U-MOSIII series. It is engineered for high-speed and high-efficiency DC-DC converters, notebook PC applications, and portable equipment.
Key electrical characteristics include a drain-source voltage of 60V, a continuous drain current of 25A, and a low typical drain-source ON resistance of 16 mΩ at VGS = 10V, ID = 13A. It also features a small gate charge of 6.6 nC (typ.) and a high forward transfer admittance of 40 S (typ.).
The device is housed in a small and thin SOP package, suitable for surface mounting. Its thermal characteristics include a channel-to-case thermal resistance of 2.78 °C/W. The operating temperature range is from -55°C to 150°C.
This MOSFET is an electrostatic-sensitive device and requires careful handling.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.54 | $2.54 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 60 V.
The typical drain-source ON resistance is 16 mΩ at VGS = 10 V, ID = 13 A.
The package type is SOP.
The maximum operating temperature is 150°C.
The typical gate charge is 6.6 nC.