TPCA8015-H(TE12L
Toshiba
The Toshiba TPCA8015-H(TE12L is an N-Channel MOSFET designed for high-efficiency DC-DC converter applications. It offers a small footprint and high-speed switching capabilities.
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9,955 pcs
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9955 pcs | On Request | 1 | On Request | On Request | 10+ | On Request | On Request |
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The Toshiba TPCA8015-H is a Silicon N-Channel MOS Type transistor from the Ultra-High-Speed U-MOSIII family. It is engineered for high-efficiency DC-DC converter applications, benefiting from a small and thin package for a reduced footprint and high-speed switching performance.
Key electrical characteristics include a drain-source breakdown voltage of 40V, a low drain-source ON-resistance as low as 4.4 mΩ (typ.) at 10V gate-source voltage, and a high forward transfer admittance of 60 S (typ.). It also features a small gate charge of 13 nC (typ.) and a low leakage current of 10 μA (max).
The device operates with a gate threshold voltage ranging from 1.1V to 2.3V. Absolute maximum ratings include a continuous drain current of 35A and a pulsed drain current of 105A. Thermal characteristics show a channel-to-case thermal resistance of 2.78 °C/W.
This MOSFET is suitable for applications requiring efficient power conversion and fast switching. Its robust design and specifications make it a reliable component for demanding electronic circuits.
40 V minimum at ID = 10 mA, VGS = 0 V.
1.1 V to 2.3 V at VDS = 10 V, ID = 1 mA.
4.4 mΩ at VGS = 10 V, ID = 17.5 A.
35 A DC.
2-5Q1A surface mount package.
150 °C.
-55 to 150 °C.