| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
690 pcs
|
690 pcs | On Request | 1 | On Request | On Request | 12+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Toshiba TPCA8011-H is an N-Channel MOSFET designed for high-efficiency DC/DC converters, notebook PC applications, and portable equipment. It features a 20V drain-source voltage (VDSS) and a continuous drain current (ID) of 40A at 25°C (Ta).
Key electrical characteristics include a maximum drain-source on-resistance (Rds On) of 3.5mOhm at 20A and 4.5V, and a gate threshold voltage (Vgs(th)) ranging from 0.6V to 1.3V at 200µA. The device has a maximum gate-source voltage (VGSS) of ±12V and a maximum continuous drain current (ID) of 40A.
This MOSFET is housed in an 8-PowerVDFN package and is designed for surface mounting. It operates at a maximum channel temperature of 150°C. The device is suitable for applications requiring high-speed switching and a small footprint.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
20V.
8-PowerVDFN surface mount package.
Maximum junction temperature is 150°C. Storage temperature range is -55°C to 150°C.
1.3V maximum at 200µA drain current.
3.5mOhm maximum at 20A drain current and 4.5V gate-source voltage.
32nC maximum at 5V gate-source voltage.
Single-pulse avalanche energy is 208mJ.