| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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8,973 pcs
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8973 pcs | On Request | 1 | On Request | On Request | 14+PBF | On Request | On Request | |
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313 pcs
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313 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request |
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| Halogen Free |
The Toshiba TPCA8006-H is a high-performance Silicon N-Channel MOSFET. It is manufactured by Toshiba and comes in a surface-mountable SOP package.
Key electrical specifications include a maximum Drain-Source Voltage of 100V and a continuous Current Rating of 18A. The on-resistance (RDS(on)) is a maximum of 67mΩ, and the input capacitance is typically 780pF. Switching characteristics are also provided, with a typical Rise Time of 3ns and a Fall Time of 2ns.
Thermal performance is supported by a maximum power dissipation of 1.6W. The operating temperature range spans from -55°C to 150°C, making it suitable for various environmental conditions. The MOSFET is designed for surface mounting, offering convenience in PCB assembly.
This component is part of Toshiba's line of N-Channel MOSFETs, suitable for a range of electronic applications requiring efficient power switching and control.
The maximum Drain-Source Voltage for the TPCA8006-H is 100V.
The TPCA8006-H has a continuous current rating of 18A.
The maximum on-resistance for the TPCA8006-H is 67mΩ.
The TPCA8006-H operates between -55°C and 150°C.
The TPCA8006-H is supplied in an SOP package.
The TPCA8006-H is designed for surface mounting.