| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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90,400 pcs
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90400 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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9,976 pcs
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9976 pcs | On Request | 1 | On Request | On Request | 10+ | On Request | On Request |
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The TPCA8003-H is an N-Channel power MOSFET from Toshiba. It provides a minimum drain-source breakdown voltage of 30 V and supports a continuous drain current of 35 A, with a 105 A pulsed drain current rating. The gate threshold voltage is specified from 1.1 V to 2.3 V, allowing logic-level drive in many designs.
On-resistance is minimized for conduction efficiency, with a typical RDS(ON) of 5.1 mΩ at VGS = 10 V and 7.3 mΩ at VGS = 4.5 V; the maximum at 4.5 V is 9.5 mΩ. Gate leakage is limited to ±10 µA and drain cutoff current to 10 µA, helping minimize off-state losses.
These electrical characteristics make the device suitable for high-current switching and power management applications. Designers should consider the gate-drive voltage when calculating conduction losses, as on-resistance varies with VGS.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The continuous drain current rating is 35 A; pulsed drain current is 105 A.
The minimum drain-source breakdown voltage is 30 V at ID = 10 mA and VGS = 0 V.
The gate threshold voltage is from 1.1 V to 2.3 V at VDS = 10 V and ID = 1 mA.
At VGS = 4.5 V and ID = 18 A, the typical on-resistance is 7.3 mΩ and the maximum is 9.5 mΩ.
At VGS = 10 V and ID = 18 A, the typical on-resistance is 5.1 mΩ.
Gate leakage is ±10 µA maximum and drain cutoff current is 10 µA maximum.