| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,000 pcs
|
7000 pcs | On Request | 1 | On Request | On Request | 10+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Feature | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This N-Channel MOSFET from Toshiba, part number TPC8A05-H(TE12L,QM, is designed for power switching applications. It offers a maximum drain-source voltage of 30V and can handle a continuous current of 10A at ambient temperature.
The device exhibits a maximum on-resistance of 13.3mOhm at 5A and 10V Vgs, with a gate threshold voltage of 2.3V maximum at 1mA. Key electrical parameters include an input capacitance of 1700pF maximum and a gate charge of 15nC maximum.
Packaged in an 8-SOP (5.5x6.0) surface mount configuration, this MOSFET operates within a temperature range of -150°C to 150°C. It is constructed using Metal Oxide technology and includes a Schottky Diode integrated into the body.
This component is suitable for various electronic circuits requiring efficient power management and switching capabilities.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
10A at ambient temperature.
8-SOIC (0.173", 4.40mm Width) also known as 8-SOP (5.5x6.0mm).
150°C.
13.3mOhm at 5A and 10V gate drive.
Yes, it features a Schottky diode as the body diode.
Maximum 2.3V at 1mA drain current.