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TPC8A02-H The Toshiba TPC8A02-H is an N-Channel MOSFET from the U-MOS III series, designed for high-efficiency DC/DC converters. It features a built-in Schottky barrier diode for improved performance.
Mfr Part #:

TPC8A02-H

Available from 2 distributors
Mfr Name: Toshiba
Toshiba
The Toshiba TPC8A02-H is an N-Channel MOSFET from the U-MOS III series, designed for high-efficiency DC/DC converters. It features a built-in Schottky barrier diode for improved performance.
✓ Total Stock: 37,206 pcs

TPC8A02-H Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
37,000 pcs
On Request
37000 pcs On Request 1 On Request On Request 1243+PB On Request On Request
Smaxon Electronics ✓
Non-Authorised Inventory information
206 pcs
On Request
206 pcs On Request 1 On Request On Request 1243+ On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

TPC8A02-H Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Forward Voltage
Gate Charge
Mounting Type
SVHC Present
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TPC8A02-H Description

Short technical summary and product information.

The Toshiba TPC8A02-H is a Silicon N-Channel MOS Type Field Effect Transistor utilizing Ultra-High-Speed U-MOS III technology. This component is designed for high-efficiency DC/DC converter applications, notebook PCs, and portable equipment.

 

Key electrical characteristics include a low drain-source ON-resistance of 4.3 mΩ (typ.) and a high forward transfer admittance of 40 S (typ.). It also boasts a small gate charge of 11 nC (typ.) and a low leakage current of 100 µA (max) at 30V drain-source voltage. The enhancement mode transistor has a threshold voltage ranging from 1.1 to 2.3 V.

 

A notable feature is the built-in Schottky barrier diode with a low forward voltage of 0.6V (Max.). The device is suitable for high-speed switching applications. It is available in a surface mount package.

 

This MOSFET is designed to enhance the efficiency and performance of power management systems in various electronic devices.

TPC8A02-H Quick Information

Product Type: N-Channel MOSFET
Series: U-MOS III
Canonical Name: Toshiba TPC8A02-H N-Channel MOSFET
Subcategory: N-Channel

TPC8A02-H Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

TPC8A02-H Features

  • Built-in Schottky barrier diode.
  • Low drain-source ON-resistance.
  • High-speed switching capability.
  • Small gate charge for efficiency.
  • Suitable for DC/DC converters.

TPC8A02-H Applications

  • High-efficiency DC/DC converter applications.
  • Notebook PC power management circuits.
  • Portable equipment battery-powered designs.
  • High-speed switching power supplies.

TPC8A02-H FAQs

5 frequently asked questions generated from this part’s specifications.
What is the typical drain-source ON-resistance of the TPC8A02-H?

The typical drain-source ON-resistance is 4.3 mΩ when VGS is 10 V and ID is 10 A.

What is the typical gate charge for the TPC8A02-H MOSFET?

The typical gate charge is 11 nC when VDS is 10 V and VGS is 4 V.

What is the maximum leakage current for the TPC8A02-H?

The maximum leakage current is 100 µA when the drain-source voltage is 30 V.

What is the threshold voltage range for the TPC8A02-H?

The threshold voltage ranges from 1.1 to 2.3 V under test conditions of VDS = 10 V and ID = 1 mA.

Does the TPC8A02-H have a built-in Schottky barrier diode?

Yes, the TPC8A02-H features a built-in Schottky barrier diode with a maximum forward voltage of 0.6 V.

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